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330 W RF Power Field Effect Transistors (FET) 1

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
BLF548,112 by NXP Semiconductors

BLF548,112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

HIGH RELIABILITY

SOURCE

COMMON SOURCE, 2 ELEMENTS

65 V

15 A

15 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-CDFM-F4

2

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

330 W

330 W

10 dB

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON