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12.5 W RF Power Field Effect Transistors (FET) 2

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
NE5550234-AZ by Renesas Electronics

NE5550234-AZ

Renesas Electronics

NE5550234-AZ by Renesas Electronics is a N-CHANNEL RF Power FET with 0.6A max drain current and 12.5W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR technology, suitable for applications requiring high-power amplification in surface-mount configurations up to 150°C operating temperature.

SINGLE

.6 A

.6 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

12.5 W

FET General Purpose Powers

YES

NE5550234-T1-AZ by Renesas Electronics

NE5550234-T1-AZ

Renesas Electronics

NE5550234-T1-AZ by Renesas Electronics is a N-CHANNEL RF FET with 0.6A max drain current and 12.5W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR tech, operates up to 150°C, ideal for RF power applications requiring high efficiency and reliability in surface mount configurations.

SINGLE

.6 A

.6 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

12.5 W

FET General Purpose Powers

YES