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SINGLE WITH BUILT-IN DIODE RF Power Field Effect Transistors (FET) 1

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
IXZR08N120 by IXYS Corporation

IXZR08N120

IXYS Corporation

IXZR08N120 by IXYS Corp is an N-CHANNEL FET with 1200V DS breakdown voltage, 8A max drain current, and 250W power dissipation. It's used for switching applications in enhancement mode, featuring a single configuration with built-in diode. Ideal for high-power RF systems due to its isolated case connection and metal-oxide semiconductor technology.

ISOLATED

SINGLE WITH BUILT-IN DIODE

1200 V

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

250 W

Not Qualified

FET General Purpose Power

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

SWITCHING

SILICON