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Maxim Integrated RF Power Bipolar Junction Transistors (BJT) 3

RF Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
MAX2601ESA by Maxim Integrated

MAX2601ESA

Maxim Integrated

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8;

1.2 A

15 V

SINGLE

100

ULTRA HIGH FREQUENCY BAND

R-PDSO-G8

e0

1

1

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

MAX2601ESA-T by Maxim Integrated

MAX2601ESA-T

Maxim Integrated

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Maximum Collector-Emitter Voltage: 15 V; Package Style (Meter): SMALL OUTLINE;

1.2 A

15 V

SINGLE

100

ULTRA HIGH FREQUENCY BAND

R-PDSO-G8

e0

1

1

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

MAX2602ESA-T by Maxim Integrated

MAX2602ESA-T

Maxim Integrated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL;

1.2 A

15 V

SINGLE WITH BUILT-IN DIODE

100

ULTRA HIGH FREQUENCY BAND

R-PDSO-G8

e0

1

1

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON