Loading...

21 A RF Power Bipolar Junction Transistors (BJT) 1

RF Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
MX0912B351Y,114 by NXP Semiconductors

MX0912B351Y,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 21 A; No. of Terminals: 2; Terminal Position: DUAL;

DIFFUSED EMITTER BALLASTING RESISTORS

BASE

21 A

20 V

SINGLE

L BAND

R-CDFM-F2

1

2

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

YES

FLAT

DUAL

AMPLIFIER

SILICON