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Powerex Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
QJD1210011 by Powerex

QJD1210011

Powerex

Powerex QJD1210011 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Features include 250A IDM, 0.025 ohm RDS(on), and SILICON CARBIDE technology. Package style is FLANGE MOUNT with 20 terminals in PLASTIC/EPOXY material.

ISOLATED

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

1200 V

100 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X20

2

20

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE