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Nte Electronics Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTE2380 by Nte Electronics

NTE2380

Nte Electronics

NTE2380 by Nte Electronics is a Power FET with 500V DS Breakdown Voltage, 10A IDM, and 75W Pd. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.

DRAIN

SINGLE WITH BUILT-IN DIODE

500 V

2 A

2.5 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

75 W

75 W

10 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

90 ns

100 ns

2382 by Nte Electronics

2382

Nte Electronics

The Nte Electronics 2382 is a single N-channel power FET with a min DS breakdown voltage of 100V and max drain current of 8A. Ideal for switching applications, it features an operating mode in enhancement mode technology with 0.5 ohm max drain-source resistance.

DRAIN

SINGLE

100 V

8 A

.5 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTE2395 by Nte Electronics

NTE2395

Nte Electronics

NTE2395 by Nte Electronics is a Power FET with 60V DS Breakdown Voltage, 200A IDM, and 0.028 ohm RDS. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

100 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

50 A

50 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

200 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTE2987 by Nte Electronics

NTE2987

Nte Electronics

NTE2987 by Nte Electronics is a Power FET with 100V DS Breakdown Voltage, 80A IDM, and 0.12 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE. Features N-CHANNEL configuration in PLASTIC/EPOXY package with THROUGH-HOLE terminals.

FAST SWITCHING

120 mJ

DRAIN

SINGLE

100 V

20 A

.12 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

80 A

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON