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Efficient Power Conversion Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
EPC8010 by Efficient Power Conversion

EPC8010

Efficient Power Conversion

EPC8010 by Efficient Power Conversion is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. Featuring a built-in diode, it operates in enhancement mode with 7.5A pulsed drain current and 0.16 ohm on-resistance. Utilizes gallium nitride technology in a rectangular package shape for efficient power management.

ULTRA LOW RESISTANCE

SINGLE WITH BUILT-IN DIODE

100 V

2.7 A

.16 ohm

METAL-OXIDE SEMICONDUCTOR

R-XXUC-X6

1

6

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

7.5 A

UNSPECIFIED

UNSPECIFIED

NOT SPECIFIED

SWITCHING

GALLIUM NITRIDE