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89 W Power Field Effect Transistors (FET) 10

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IRF6727MTR1PBF by International Rectifier

IRF6727MTR1PBF

International Rectifier

IRF6727MTR1PBF by International Rectifier is a N-CHANNEL FET with 180A ID, 89W Pd, and 150°C max temp. Ideal for power applications requiring high drain current in enhancement mode operation.

SINGLE

180 A

180 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

89 W

FET General Purpose Power

YES

BSB008NE2LXXUMA1 by Infineon Technologies

BSB008NE2LXXUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Maximum Drain-Source On Resistance: .0008 ohm; Package Shape: RECTANGULAR;

ULTRA LOW RESISTANCE

600 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

180 A

.0008 ohm

METAL-OXIDE SEMICONDUCTOR

R-MBCC-N3

e4

3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

METAL

RECTANGULAR

CHIP CARRIER

N-CHANNEL

89 W

400 A

Not Qualified

YES

SILVER NICKEL

NO LEAD

BOTTOM

SWITCHING

SILICON

BSB014N04LX3GXUMA1 by Infineon Technologies

BSB014N04LX3GXUMA1

Infineon Technologies

Infineon Technologies' BSB014N04LX3GXUMA1 is a power FET with N-channel polarity. It has a min DS breakdown voltage of 40V and can handle a max pulsed drain current of 400A. This transistor is commonly used for switching applications.

260 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

180 A

.0014 ohm

METAL-OXIDE SEMICONDUCTOR

R-MBCC-N3

e4

3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

METAL

RECTANGULAR

CHIP CARRIER

N-CHANNEL

89 W

400 A

Not Qualified

YES

SILVER NICKEL

NO LEAD

BOTTOM

SWITCHING

SILICON

BSB015N04NX3GXUMA1 by Infineon Technologies

BSB015N04NX3GXUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Package Shape: RECTANGULAR; JESD-609 Code: e4;

290 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

180 A

.0015 ohm

METAL-OXIDE SEMICONDUCTOR

R-MBCC-N3

e4

3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

METAL

RECTANGULAR

CHIP CARRIER

N-CHANNEL

89 W

400 A

Not Qualified

YES

SILVER NICKEL

NO LEAD

BOTTOM

SWITCHING

SILICON

IPI50R350CP by Infineon Technologies

IPI50R350CP

Infineon Technologies

IPI50R350CP by Infineon is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It has a max IDM of 22A and EAS of 246mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.35 ohm RDS(on) and can handle up to 89W power dissipation at 150°C.

246 mJ

SINGLE WITH BUILT-IN DIODE

500 V

10 A

10 A

.35 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

89 W

22 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BSB019N03LXG by Infineon Technologies

BSB019N03LXG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 30 V;

AVALANCHE RATED

290 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

174 A

31 A

.0019 ohm

METAL-OXIDE SEMICONDUCTOR

R-MBCC-N3

e3

3

1

3

ENHANCEMENT MODE

150 Cel

METAL

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

89 W

400 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

BOTTOM

SWITCHING

SILICON

BSC027N03SG by Infineon Technologies

BSC027N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

800 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

100 A

25 A

.0039 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

89 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

BSC024N025SG by Infineon Technologies

BSC024N025SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; No. of Terminals: 8; No. of Elements: 1;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

800 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

100 A

27 A

.0037 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

89 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

AON7140 by Alpha & Omega Semiconductor

AON7140

Alpha & Omega Semiconductor

AON7140 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 550A IDM, 135mJ EAS, and 0.0035 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and -55°C min temp.

135 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

148 A

148 A

.0035 ohm

METAL-OXIDE SEMICONDUCTOR

65 pF

S-PDSO-N8

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

89 W

550 A

YES

NO LEAD

DUAL

SWITCHING

SILICON

DMT15H017LPSW-13 by Diodes Incorporated

DMT15H017LPSW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Terminal Finish: MATTE TIN; Maximum Drain Current (ID): 58 A;

315.4 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

58 A

.0255 ohm

METAL-OXIDE SEMICONDUCTOR

6.7 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

89 W

230 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON