Loading...

86 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IXTA1R4N120P-TRL by IXYS Corporation

IXTA1R4N120P-TRL

IXYS Corporation

IXTA1R4N120P-TRL by IXYS Corp is a N-CHANNEL FET with 1200V DS breakdown voltage, 3A IDM, and 150mJ EAS. Ideal for switching applications, it operates in enhancement mode with -55 to 150 °C temperature range. The single package has GULL WING terminals and offers high power dissipation of 86W in a small outline style.

AVALANCHE RATED

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

1.4 A

13 ohm

METAL-OXIDE SEMICONDUCTOR

7.6 pF

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

86 W

3 A

YES

Matte Tin (Sn)

GULL WING

SINGLE

10

SWITCHING

SILICON