Loading...

843 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
MSCSM170HM12CAG by Microchip Technology

MSCSM170HM12CAG

Microchip Technology

MSCSM170HM12CAG by Microchip is an N-CHANNEL FET with 1700V DS breakdown voltage, ideal for switching applications. It features 4 elements, 360A IDM, and 0.015 ohm max drain-source resistance. With a max power dissipation of 843W and operating temperature range from -40 to 175 °C, it offers high performance in complex configurations.

ISOLATED

COMPLEX

1700 V

179 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

R-XUFM-X12

4

12

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

843 W

360 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE