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8 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK7880-55A,115 by NXP Semiconductors

BUK7880-55A,115

NXP Semiconductors

BUK7880-55A,115 by NXP is an N-channel power FET designed for efficient performance in enhancement mode. It supports a max drain current of 7 A and power dissipation of 8 W, operating up to 150 °C. Ideal for applications requiring reliable switching and amplification.

SINGLE

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

8 W

FET General Purpose Power

YES

TIN

30

BUK98180-100A,115 by NXP Semiconductors

BUK98180-100A,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;

16 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

4.6 A

4.6 A

.201 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

8 W

18 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BUK9875-100A,115 by NXP Semiconductors

BUK9875-100A,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Peak Reflow Temperature (C): 260; Maximum Pulsed Drain Current (IDM): 28 A;

49 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

7 A

7 A

.084 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

8 W

28 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BUK78150-55A,115 by NXP Semiconductors

BUK78150-55A,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Maximum Drain Current (Abs) (ID): 5.5 A; Maximum Drain Current (ID): 5.5 A;

25 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

5.5 A

5.5 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

8 W

22 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BUK78150-55A,135 by NXP Semiconductors

BUK78150-55A,135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; JESD-609 Code: e3; Case Connection: DRAIN;

25 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

5.5 A

5.5 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

8 W

22 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BUK9832-55A,115 by NXP Semiconductors

BUK9832-55A,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 47 A;

100 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

12 A

12 A

.036 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

8 W

47 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BUK9880-55A,115 by NXP Semiconductors

BUK9880-55A,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;

36 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

7 A

7 A

.089 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

8 W

30 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON