Loading...

780 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSM120D12P2C005 by ROHM

BSM120D12P2C005

ROHM

ROHM BSM120D12P2C005 is a N-CHANNEL FET with 1200V DS breakdown voltage, 240A IDM, and 780W max power dissipation. Ideal for high-power SWITCHING applications due to its SERIES CONNECTED configuration and SILICON CARBIDE technology.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

1200 V

120 A

120 A

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X8

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

780 W

240 A

FET General Purpose Powers

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

IXFT78N60X3HV by Littelfuse

IXFT78N60X3HV

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 780 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;

AVALANCHE RATED

2200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

78 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

36 pF

TO-268AA

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

780 W

120 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

IXFH78N60X3 by Littelfuse

IXFH78N60X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 780 W; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-247AD;

AVALANCHE RATED

2200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

78 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

36 pF

TO-247AD

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

780 W

120 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFH70N65X3 by Littelfuse

IXFH70N65X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 780 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;

AVALANCHE RATED

2500 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

70 A

.044 ohm

METAL-OXIDE SEMICONDUCTOR

25 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

780 W

110 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON