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78 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSB028N06NN3GXUMA1 by Infineon Technologies

BSB028N06NN3GXUMA1

Infineon Technologies

Infineon's BSB028N06NN3GXUMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 360A IDM and 0.0028 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C. With SILICON element material and METAL-OXIDE SEMICONDUCTOR technology, this FET offers high performance in a CHIP CARRIER package.

590 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

90 A

22 A

.0028 ohm

METAL-OXIDE SEMICONDUCTOR

R-MBCC-N3

e4

3

1

3

ENHANCEMENT MODE

150 Cel

METAL

RECTANGULAR

CHIP CARRIER

N-CHANNEL

78 W

360 A

Not Qualified

FET General Purpose Power

YES

SILVER NICKEL

NO LEAD

BOTTOM

SWITCHING

SILICON

NTB65N02R by Onsemi

NTB65N02R

Onsemi

NTB65N02R by Onsemi is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0105 ohm RDS(on), and 78W Pdiss. Suitable for surface mount with GULL WING terminals, this MOSFET operates in ENHANCEMENT MODE up to 150 °C.

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

65 A

7.6 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

78 W

160 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTP65N02R by Onsemi

NTP65N02R

Onsemi

NTP65N02R by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 160A IDM, and 0.0105 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style: FLANGE MOUNT, operating temp: 150 °C, and EAS of 60mJ make it suitable for high-power tasks.

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

65 A

7.6 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

78 W

160 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BSC032N03S by Infineon Technologies

BSC032N03S

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; Avalanche Energy Rating (EAS): 550 mJ; Terminal Finish: TIN LEAD;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

550 mJ

SINGLE WITH BUILT-IN DIODE

30 V

23 A

23 A

.0049 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N8

e0

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

78 W

200 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

NO LEAD

DUAL

SWITCHING

SILICON

BSC032N03SG by Infineon Technologies

BSC032N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; Maximum Drain-Source On Resistance: .0049 ohm; Maximum Drain Current (ID): 23 A;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

550 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

100 A

23 A

.0049 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

78 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON