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77 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NP55N055SDG-E1-AY by Renesas Electronics

NP55N055SDG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

55 A

55 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

77 W

FET General Purpose Power

YES

NOT SPECIFIED

NP55N055SDG-E2-AY by Renesas Electronics

NP55N055SDG-E2-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 55 A;

SINGLE

55 A

55 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

77 W

FET General Purpose Power

YES

NOT SPECIFIED

NP55N055SUG-E1-AY by Renesas Electronics

NP55N055SUG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 55 A;

SINGLE

55 A

55 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

77 W

FET General Purpose Power

YES

NOT SPECIFIED

NVMFS4C03NT3G by Onsemi

NVMFS4C03NT3G

Onsemi

NVMFS4C03NT3G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 143A ID, and 0.0024 ohm RDS(ON). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.

549 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

143 A

143 A

.0024 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

77 W

900 A

AEC-Q101

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS4C03NWFT3G by Onsemi

NVMFS4C03NWFT3G

Onsemi

NVMFS4C03NWFT3G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 143A ID, and 0.0024 ohm RDS(ON). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.

549 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

143 A

143 A

.0024 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

77 W

900 A

AEC-Q101

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NTMFS6B14NT3G by Onsemi

NTMFS6B14NT3G

Onsemi

NTMFS6B14NT3G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 180A IDM, and 0.015 ohm RDS(on). Ideal for applications requiring high power dissipation in small outline packages. Operating from -55 to 150 °C, it's suitable for various enhancement mode power management circuits.

29 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

50 A

10 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

77 W

180 A

YES

MATTE TIN

FLAT

DUAL

30

SILICON