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74.4 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTB75N03RT4 by Onsemi

NTB75N03RT4

Onsemi

NTB75N03RT4 by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 225A IDM, and 0.013 ohm RDS(on). Ideal for SWITCHING applications due to its 74.4W power dissipation and ENHANCEMENT MODE operation. Features GULL WING terminals in a RECTANGULAR package style.

71.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

9.7 A

75 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

74.4 W

225 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTB75N03RT4G by Onsemi

NTB75N03RT4G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 74.4 W; Maximum Pulsed Drain Current (IDM): 225 A; No. of Elements: 1;

71.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

9.7 A

75 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

74.4 W

225 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTP75N03RG by Onsemi

NTP75N03RG

Onsemi

NTP75N03RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 225A IDM, and 0.013 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 74.4W at 150 °C.

71.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

9.7 A

75 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

74.4 W

225 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON