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71 W Power Field Effect Transistors (FET) 16

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PSMN3R5-30LL,115 by NXP Semiconductors

PSMN3R5-30LL,115

NXP Semiconductors

PSMN3R5-30LL,115 by NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 40 A and power dissipation of 71 W, making it ideal for high-efficiency applications in automotive and industrial sectors. With an operating temp up to 150 °C, it ensures reliability in demanding environments.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

71 W

FET General Purpose Power

YES

NVD6416ANT4G by Onsemi

NVD6416ANT4G

Onsemi

NVD6416ANT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 62A IDM, and 0.081 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package suitable for automotive applications due to AEC-Q101 compliance.

43 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

17 A

17 A

.081 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

71 W

62 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

NTDV5804NT4G by Onsemi

NTDV5804NT4G

Onsemi

NTDV5804NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 40V DS Breakdown Voltage, 125A Max Pulsed Drain Current, and 0.0075 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in automotive and industrial electronics due to its robust design and high current handling capabilities.

195 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

69 A

69 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

71 W

125 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTD6416AN-1G by Onsemi

NTD6416AN-1G

Onsemi

NTD6416AN-1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 62A IDM, and 0.081 ohm RDS. Ideal for power applications requiring high drain current handling in enhancement mode operation. Suitable for use in various electronic devices due to its high power dissipation of 71W and operating temperature up to 175 °C.

43 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

17 A

17 A

.081 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

71 W

62 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

NTD5865NT4G by Onsemi

NTD5865NT4G

Onsemi

NTD5865NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 137A IDM, 36mJ EAS, and 0.018 ohm RDS(on). With a max power dissipation of 71W and operating temperature of 150 °C, it offers high performance in a small outline package.

36 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

43 A

38 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

71 W

137 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

IRL3715PBF by International Rectifier

IRL3715PBF

International Rectifier

IRL3715PBF by International Rectifier is a N-CHANNEL Power FET with 20V DS Breakdown Voltage and 210A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and 0.014 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 71W and can handle up to 54A Drain Current.

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

30 A

54 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

71 W

210 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPDH6N03LAG by Infineon Technologies

IPDH6N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 350 A;

LOGIC LEVEL COMPATIBLE

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

71 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPFH6N03LAG by Infineon Technologies

IPFH6N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Maximum Drain Current (ID): 50 A; Additional Features: LOGIC LEVEL COMPATIBLE;

LOGIC LEVEL COMPATIBLE

150 mJ

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0062 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

71 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTD5804NT4G by Onsemi

NTD5804NT4G

Onsemi

NTD5804NT4G by Onsemi is an N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 125A and EAS of 195mJ, making it suitable for high-power operations. With a compact SMALL OUTLINE package and low 0.0085 ohm RDS(on), it offers efficient performance in various electronic designs.

195 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

69 A

69 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

71 W

125 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

IPD25CNE8NG by Infineon Technologies

IPD25CNE8NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Transistor Application: SWITCHING; Case Connection: DRAIN;

65 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

85 V

35 A

35 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

71 W

140 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPI26CN10NG by Infineon Technologies

IPI26CN10NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 71 W; JESD-30 Code: R-PSIP-T3; Package Shape: RECTANGULAR;

65 mJ

SINGLE WITH BUILT-IN DIODE

100 V

35 A

35 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

71 W

140 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP26CNE8NG by Infineon Technologies

IPP26CNE8NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 71 W; Terminal Finish: MATTE TIN; Package Body Material: PLASTIC/EPOXY;

65 mJ

SINGLE WITH BUILT-IN DIODE

85 V

35 A

35 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

71 W

140 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVD6416ANLT4G-VF01 by Onsemi

NVD6416ANLT4G-VF01

Onsemi

NVD6416ANLT4G-VF01 by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 70A IDM, and 0.074 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.

50 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

19 A

19 A

.074 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

71 W

70 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SILICON

SSVD5804NT4G by Onsemi

SSVD5804NT4G

Onsemi

SSVD5804NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 125A IDM, 195mJ EAS, and 0.0075 ohm Drain-Source Resistance. Suitable for high-power switching circuits in automotive and industrial electronics due to its robust design and high power dissipation capability.

195 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

69 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

280 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

71 W

125 A

AEC-Q101

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NVD6416ANT4G-VF01 by Onsemi

NVD6416ANT4G-VF01

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Terminal Position: SINGLE; No. of Elements: 1;

43 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

17 A

17 A

.081 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

71 W

62 A

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

IPD088N06N3GATMA1 by Infineon Technologies

IPD088N06N3GATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Maximum Pulsed Drain Current (IDM): 200 A; JESD-609 Code: e3;

43 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

50 A

.0088 ohm

METAL-OXIDE SEMICONDUCTOR

23 pF

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

71 W

200 A

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON