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66 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NP32N055SLE-E1-AY by Renesas Electronics

NP32N055SLE-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 32 A;

SINGLE

32 A

32 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

66 W

FET General Purpose Power

YES

IPD50R520CP by Infineon Technologies

IPD50R520CP

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Maximum Drain Current (Abs) (ID): 7.1 A; JESD-609 Code: e3;

166 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

500 V

7.1 A

7.1 A

.52 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

66 W

15 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPS50R520CP by Infineon Technologies

IPS50R520CP

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 66 W; JESD-30 Code: R-PSIP-T3; Maximum Operating Temperature: 150 Cel;

166 mJ

SINGLE WITH BUILT-IN DIODE

500 V

7.1 A

7.1 A

.52 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

66 W

15 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

BSC240N12NS3G by Infineon Technologies

BSC240N12NS3G

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; No. of Terminals: 8; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

50 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

120 V

37 A

37 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N8

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

66 W

148 A

Not Qualified

FET General Purpose Power

YES

NO LEAD

DUAL

NOT SPECIFIED

SWITCHING

SILICON