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625 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STY145N65M5 by STMicroelectronics

STY145N65M5

STMicroelectronics

STY145N65M5 by STMicroelectronics is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 552A Max Pulsed Drain Current, 2420mJ Avalanche Energy Rating, and 0.015 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 625W at 150°C.

2420 mJ

SINGLE WITH BUILT-IN DIODE

650 V

138 A

138 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

625 W

552 A

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STE60N105DK5 by STMicroelectronics

STE60N105DK5

STMicroelectronics

STE60N105DK5 by STMicroelectronics is a N-CHANNEL FET with 44A ID and 625W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configurations.

SINGLE

44 A

44 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

625 W

FET General Purpose Powers

NOT SPECIFIED

FDH50N50-F133 by Onsemi

FDH50N50-F133

Onsemi

FDH50N50-F133 by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 192A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 625W and operating temperature up to 150°C, this transistor offers reliable performance in various high-power electronic systems.

1868 mJ

SINGLE WITH BUILT-IN DIODE

500 V

48 A

48 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

625 W

192 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IXFH60N60X3 by Littelfuse

IXFH60N60X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Pulsed Drain Current (IDM): 90 A; Maximum Drain-Source On Resistance: .051 ohm;

AVALANCHE RATED

1700 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

60 A

.051 ohm

METAL-OXIDE SEMICONDUCTOR

53 pF

TO-220AD

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

625 W

90 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFT60N60X3HV by Littelfuse

IXFT60N60X3HV

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 625 W; Additional Features: AVALANCHE RATED; Avalanche Energy Rating (EAS): 1700 mJ;

AVALANCHE RATED

1700 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

60 A

.051 ohm

METAL-OXIDE SEMICONDUCTOR

53 pF

TO-268AA

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

625 W

90 A

YES

GULL WING

SINGLE

SWITCHING

SILICON