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57.7 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PHU11NQ10T,127 by NXP Semiconductors

PHU11NQ10T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 57.7 W; Maximum Drain Current (ID): 10.9 A; Maximum Drain Current (Abs) (ID): 10.9 A;

35 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

10.9 A

10.9 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

57.7 W

43.6 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STL38DN6F7AG by STMicroelectronics

STL38DN6F7AG

STMicroelectronics

STL38DN6F7AG by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 10 A, a breakdown voltage of 60 V, and operates at temperatures up to 175 °C. Ideal for power management in compact electronic devices.

BULK: 3000

50 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

10 A

.027 ohm

METAL-OXIDE SEMICONDUCTOR

7.9 pF

R-PDSO-F8

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

57.7 W

40 A

AEC-Q101

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

DMTH4014LFVW-13 by Diodes Incorporated

DMTH4014LFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57.7 W; JESD-609 Code: e3; Transistor Element Material: SILICON;

19.6 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

49.8 A

.0137 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

S-PDSO-F8

e3

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

57.7 W

180 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH4014LFVW-7 by Diodes Incorporated

DMTH4014LFVW-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57.7 W; Avalanche Energy Rating (EAS): 19.6 mJ; Minimum Operating Temperature: -55 Cel;

19.6 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

49.8 A

.0137 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

S-PDSO-F8

e3

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

57.7 W

180 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON