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565 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SCTWA90N65G2V-4 by STMicroelectronics

SCTWA90N65G2V-4

STMicroelectronics

SCTWA90N65G2V-4 by STMicroelectronics is a N-channel power FET with 650V DS breakdown voltage and 220A max pulsed drain current. It is used for switching applications, operating in enhancement mode with a max power dissipation of 565W. The transistor features a silicon carbide element material and metal-oxide semiconductor technology, suitable for high-power requirements in various industries.

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

119 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

49 pF

R-PSFM-T4

1

4

ENHANCEMENT MODE

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

565 W

220 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE