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56.8 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PHX34NQ11T,127 by NXP Semiconductors

PHX34NQ11T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56.8 W; Maximum Pulsed Drain Current (IDM): 99.4 A; Case Connection: ISOLATED;

115 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

110 V

24.8 A

24.8 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

56.8 W

99.4 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SI7190ADP-T1-RE3 by Vishay Intertechnology

SI7190ADP-T1-RE3

Vishay Intertechnology

Vishay Intertechnology's SI7190ADP-T1-RE3 is a N-channel FET with 250V DS breakdown voltage, ideal for switching applications. Featuring a max IDM of 30A and EAS of 4.05mJ, this MOSFET operates in enhancement mode with a 0.102ohm RDS(on). Its small outline package and high power dissipation make it suitable for various electronic designs.

4.05 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

250 V

14.4 A

14.4 A

.102 ohm

METAL-OXIDE SEMICONDUCTOR

7 pF

R-PDSO-F5

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

56.8 W

30 A

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

60 ns

45 ns