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540 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SIHFPS43N50K-GE3 by Vishay Intertechnology

SIHFPS43N50K-GE3

Vishay Intertechnology

SIHFPS43N50K-GE3 by Vishay Intertechnology is a N-CHANNEL FET with 500V DS Breakdown Voltage, 190A IDM, and 910mJ EAS. Ideal for SWITCHING applications due to its 0.09 ohm RDS(on), 540W Pdiss, and -55 to 150°C operating range.

910 mJ

SINGLE WITH BUILT-IN DIODE

500 V

47 A

47 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

120 pF

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

540 W

190 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON