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53 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPS70R1K4CEAKMA1 by Infineon Technologies

IPS70R1K4CEAKMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 53 W; Maximum Pulsed Drain Current (IDM): 8.3 A; JEDEC-95 Code: TO-251;

26 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

700 V

5.4 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

53 W

8.3 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPSA70R1K4CEAKMA1 by Infineon Technologies

IPSA70R1K4CEAKMA1

Infineon Technologies

IPSA70R1K4CEAKMA1 by Infineon is a N-CHANNEL FET with 700V DS breakdown voltage, ideal for switching applications. It features 8.3A max pulsed drain current and 26mJ avalanche energy rating, operating in enhancement mode. With a package style of IN-LINE and through-hole terminals, it offers high power dissipation up to 53W at temperatures ranging from -40°C to 150°C.

26 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

700 V

5.4 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

53 W

8.3 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON