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520 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SIHG73N60E-GE3 by Vishay Intertechnology

SIHG73N60E-GE3

Vishay Intertechnology

Vishay Intertechnology's SIHG73N60E-GE3 is a N-channel power FET with 600V DS breakdown voltage and 236A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.039 ohm max RDS(on), and 520W max power dissipation.

AVALANCHE RATED

2030 mJ

SINGLE WITH BUILT-IN DIODE

600 V

73 A

73 A

.039 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

520 W

236 A

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IXTN21N100 by IXYS Corporation

IXTN21N100

IXYS Corporation

IXTN21N100 by IXYS Corp is a N-CHANNEL FET with 1000V DS breakdown voltage, 84A IDM, and 0.55 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with max power dissipation of 520W. The transistor features a single configuration with built-in diode and comes in a rectangular package shape.

ISOLATED

SINGLE WITH BUILT-IN DIODE

1000 V

21 A

21 A

.55 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

520 W

520 W

84 A

Not Qualified

FET General Purpose Power

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON

IXFN48N50U2 by IXYS Corporation

IXFN48N50U2

IXYS Corporation

IXYS Corporation's IXFN48N50U2 is a N-CHANNEL FET with 500V DS breakdown voltage and 48A max drain current. Ideal for switching applications, it operates in enhancement mode with 192A pulsed drain current. The transistor features a built-in diode, 0.1 ohm max on-resistance, and can handle up to 520W power dissipation.

AVALANCHE RATED

ISOLATED

SINGLE WITH BUILT-IN DIODE

500 V

48 A

48 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

520 W

192 A

Not Qualified

FET General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

IXFH48N60X3 by Littelfuse

IXFH48N60X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Terminal Form: THROUGH-HOLE; Transistor Application: SWITCHING;

AVALANCHE RATED

1400 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

48 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

18 pF

TO-247AD

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

520 W

68 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFH46N65X3 by Littelfuse

IXFH46N65X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 18 pF;

AVALANCHE RATED

1200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

46 A

.073 ohm

METAL-OXIDE SEMICONDUCTOR

18 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

520 W

65 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON