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52 W Power Field Effect Transistors (FET) 19

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
UPA2813T1L-E2-AT by Renesas Electronics

UPA2813T1L-E2-AT

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Terminal Finish: MATTE TIN; Minimum DS Breakdown Voltage: 30 V;

SINGLE

30 V

27 A

27 A

.0062 ohm

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

260

P-CHANNEL

52 W

Other Transistors

YES

MATTE TIN

UPA2812T1L-E2-AT by Renesas Electronics

UPA2812T1L-E2-AT

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain-Source On Resistance: .0048 ohm;

SINGLE

30 V

30 A

30 A

.0048 ohm

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

52 W

Other Transistors

YES

NOT SPECIFIED

UPA2821T1L-E1-AT by Renesas Electronics

UPA2821T1L-E1-AT

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 26 A;

SINGLE

26 A

26 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

52 W

FET General Purpose Power

YES

UPA2822T1L-E1-AT by Renesas Electronics

UPA2822T1L-E1-AT

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Maximum Drain Current (Abs) (ID): 34 A; Minimum DS Breakdown Voltage: 30 V;

SINGLE

30 V

34 A

34 A

.0026 ohm

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

52 W

FET General Purpose Power

YES

NOT SPECIFIED

NTD4809NH-1G by Onsemi

NTD4809NH-1G

Onsemi

NTD4809NH-1G by Onsemi is a N-channel Power FET with 30V DS breakdown voltage and 130A IDM. Ideal for switching applications, it features a built-in diode, 0.0125 ohm RDS(on), and 52W max power dissipation. Operating in enhancement mode, this MOSFET has a max temp of 175 °C and is designed for through-hole mounting.

112.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

58 A

9 A

.0125 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

52 W

130 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD5865NL-1G by Onsemi

NTD5865NL-1G

Onsemi

NTD5865NL-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.019 ohm RDS. It's an N-CHANNEL transistor for SWITCHING applications in ENHANCEMENT MODE. With a max power dissipation of 52W and operating temperature range from -55 to 150 °C, it's ideal for high-power circuit designs.

36 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

40 A

40 A

.019 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

52 W

137 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD5865NLT4G by Onsemi

NTD5865NLT4G

Onsemi

NTD5865NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.019 ohm RDS. It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 52W and can withstand temperatures from -55 to 150 °C.

36 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

40 A

40 A

.019 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

52 W

137 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

BSC094N03SG by Infineon Technologies

BSC094N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Avalanche Energy Rating (EAS): 90 mJ; Moisture Sensitivity Level (MSL): 3;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

90 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

35 A

14.6 A

.0094 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

52 W

140 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

IPB11N03LA by Infineon Technologies

IPB11N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Maximum Drain Current (Abs) (ID): 30 A; Qualification: Not Qualified;

LOGIC LEVEL COMPATIBLE

80 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0112 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

52 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD10N03LAG by Infineon Technologies

IPD10N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 30 A;

LOGIC LEVEL COMPATIBLE

80 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0104 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

52 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD10N03LA by Infineon Technologies

IPD10N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Minimum DS Breakdown Voltage: 25 V; Moisture Sensitivity Level (MSL): 1;

LOGIC LEVEL COMPATIBLE

80 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0104 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

52 W

210 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SILICON

IPD12N03LBG by Infineon Technologies

IPD12N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

64 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

30 A

30 A

.0116 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

52 W

120 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPF10N03LAG by Infineon Technologies

IPF10N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Package Shape: RECTANGULAR; Terminal Position: SINGLE;

LOGIC LEVEL COMPATIBLE

80 mJ

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0104 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

52 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPP11N03LA by Infineon Technologies

IPP11N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Maximum Drain-Source On Resistance: .0115 ohm; JESD-609 Code: e3;

LOGIC LEVEL COMPATIBLE

80 mJ

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0115 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

52 W

210 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP13N03LBG by Infineon Technologies

IPP13N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Drain Current (Abs) (ID): 30 A;

LOGIC LEVEL COMPATIBLE

64 mJ

SINGLE WITH BUILT-IN DIODE

30 V

30 A

30 A

.0128 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

52 W

120 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BSC085N025SG by Infineon Technologies

BSC085N025SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Case Connection: DRAIN; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

35 A

14 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

52 W

140 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

NTD4809NHT4G by Onsemi

NTD4809NHT4G

Onsemi

NTD4809NHT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage and 130A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0125 ohm RDS(on), and 52W Power Dissipation in a small outline package.

112.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

58 A

9 A

.0125 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

52 W

130 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

FDMC010N08LC by Onsemi

FDMC010N08LC

Onsemi

FDMC010N08LC by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage, 200A IDM, and 96mJ EAS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with -55 to 150 °C temperature range.

96 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

50 A

50 A

.0109 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

MO-240BA

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

52 W

200 A

YES

Matte Tin (Sn) - annealed

NO LEAD

DUAL

30

SWITCHING

SILICON

54 ns

26 ns

IPD95R1K2P7ATMA1 by Infineon Technologies

IPD95R1K2P7ATMA1

Infineon Technologies

IPD95R1K2P7ATMA1 by Infineon is a N-CHANNEL FET with 950V DS breakdown voltage, ideal for switching applications. It features a max IDM of 16A and EAS of 11mJ, operating in enhancement mode. With a package style of small outline and GULL WING terminals, it offers high power dissipation up to 52W at temperatures ranging from -55°C to 150°C.

11 mJ

SINGLE WITH BUILT-IN DIODE

950 V

6 A

6 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

52 W

16 A

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON