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5 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK9MHH-65PNN,518 by NXP Semiconductors

BUK9MHH-65PNN,518

NXP Semiconductors

BUK9MHH-65PNN,518 from NXP Semiconductors is an N-channel power FET ideal for high-efficiency applications. It supports a max drain current of 15 A and operates at up to 150 °C, making it suitable for demanding environments. Its surface mount design enhances versatility in circuit integration.

15 A

15 A

METAL-OXIDE SEMICONDUCTOR

3

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

5 W

FET General Purpose Power

YES

30

SI4410BDY-T1-E3 by Vishay Intertechnology

SI4410BDY-T1-E3

Vishay Intertechnology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5 W; Maximum Time At Peak Reflow Temperature (s): 30; No. of Elements: 1;

11.25 mJ

SINGLE WITH BUILT-IN DIODE

30 V

7.5 A

14 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

72 pF

MS-012AA

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

5 W

32 A

Not Qualified

FET General Purpose Powers

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

44 ns

36 ns

NTH4LN019N65S3H by Onsemi

NTH4LN019N65S3H

Onsemi

NTH4LN019N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 328A IDM, and 0.0193 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE operation. Features include SINGLE configuration with BUILT-IN DIODE, METAL-OXIDE SEMICONDUCTOR tech, and -55 to 150 °C operating temp range.

1421 mJ

SINGLE WITH BUILT-IN DIODE

650 V

75 A

.0193 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

5 W

328 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON