Loading...

47.2 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTMFS4744NT1G by Onsemi

NTMFS4744NT1G

Onsemi

NTMFS4744NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 106A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode and operates in ENHANCEMENT MODE. This small outline transistor has a max power dissipation of 47.2W and can withstand up to 150 °C operating temperature.

286 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

53 A

7 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

47.2 W

106 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

FLAT

DUAL

40

SWITCHING

SILICON

NTMFS4744NT3G by Onsemi

NTMFS4744NT3G

Onsemi

NTMFS4744NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 106A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications due to its 47.2W Power Dissipation, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology.

286 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

53 A

7 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

47.2 W

106 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

FLAT

DUAL

40

SWITCHING

SILICON

NTMFS4837NT1G by Onsemi

NTMFS4837NT1G

Onsemi

NTMFS4837NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 148A IDM, and 0.0075 ohm RDS(on). Ideal for SWITCHING applications due to its 47.2W power dissipation and ENHANCEMENT MODE operation at up to 150 °C.

242 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

74 A

10 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

47.2 W

148 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

FLAT

DUAL

40

SWITCHING

SILICON