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44 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FQD2N60CTF by Fairchild Semiconductor

FQD2N60CTF

Fairchild Semiconductor

FQD2N60CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.9A max drain current and 44W power dissipation. Ideal for applications requiring high efficiency in power management systems, it operates in enhancement mode at up to 150°C, making it suitable for various industrial and consumer electronics.

SINGLE

1.9 A

1.9 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

44 W

FET General Purpose Power

YES

MATTE TIN

FQPF9N15 by Fairchild Semiconductor

FQPF9N15

Fairchild Semiconductor

FQPF9N15 by Fairchild Semiconductor is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features 27.6A Max Pulsed Drain Current, 80mJ Avalanche Energy Rating, and 0.4 ohm Max Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 44W at 175°C.

80 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

150 V

6.9 A

6.9 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

44 W

27.6 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FQD17P06TF by Fairchild Semiconductor

FQD17P06TF

Fairchild Semiconductor

FQD17P06TF by Fairchild Semiconductor is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a 48A Max Pulsed Drain Current and 0.135 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 44W and can withstand temperatures up to 150°C.

300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

12 A

.135 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

44 W

48 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

FQD30N06LTM by Fairchild Semiconductor

FQD30N06LTM

Fairchild Semiconductor

FQD30N06LTM by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 96A IDM and 0.047 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 44W at 150°C.

400 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

24 A

24 A

.047 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

44 W

96 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD64CN10NG by Infineon Technologies

IPD64CN10NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Operating Temperature: 175 Cel; Transistor Application: SWITCHING;

34 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

17 A

17 A

.064 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

44 W

68 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPU64CN10NG by Infineon Technologies

IPU64CN10NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 44 W; Package Style (Meter): IN-LINE; Minimum DS Breakdown Voltage: 100 V;

34 mJ

SINGLE WITH BUILT-IN DIODE

100 V

17 A

17 A

.064 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

44 W

68 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPD49CN10NG by Infineon Technologies

IPD49CN10NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 20 A;

29 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

20 A

20 A

.049 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

44 W

80 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON