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4.5 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK9MJJ-55PTT,518 by NXP Semiconductors

BUK9MJJ-55PTT,518

NXP Semiconductors

BUK9MJJ-55PTT,518 from NXP Semiconductors is an N-channel power FET ideal for high-efficiency applications. It supports a max drain current of 12.9 A and operates at up to 150 °C, making it suitable for demanding environments. Its enhancement mode design ensures reliable performance in various electronic circuits.

12.9 A

12.9 A

METAL-OXIDE SEMICONDUCTOR

3

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

4.5 W

FET General Purpose Power

YES

30