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4.1 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMG8880LK3-13 by Diodes Incorporated

DMG8880LK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.1 W; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

16.5 A

11 A

.0093 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

4.1 W

48 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

DMN3005LK3-13 by Diodes Incorporated

DMN3005LK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.1 W; Maximum Drain Current (ID): 14.5 A; Maximum Operating Temperature: 150 Cel;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

22 A

14.5 A

.0065 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

4.1 W

48 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON