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391 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPW65R080CFDFKSA1 by Infineon Technologies

IPW65R080CFDFKSA1

Infineon Technologies

Infineon's IPW65R080CFDFKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 137A IDM and 1160mJ EAS, it operates in ENHANCEMENT MODE with 0.08 ohm RDS(ON). With a max power dissipation of 391W and temp range of -55 to 150 °C, it's suitable for high-power systems.

1160 mJ

SINGLE WITH BUILT-IN DIODE

650 V

43.3 A

43.3 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

391 W

137 A

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPT65R033G7XTMA1 by Infineon Technologies

IPT65R033G7XTMA1

Infineon Technologies

IPT65R033G7XTMA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, 245A pulsed drain current, and 0.033 ohm max on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 391W.

289 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

69 A

69 A

.033 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-F3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

391 W

245 A

YES

TIN

FLAT

SINGLE

SWITCHING

SILICON

IPW65R080CFDFKSA2 by Infineon Technologies

IPW65R080CFDFKSA2

Infineon Technologies

Infineon's IPW65R080CFDFKSA2 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 137A IDM, 1160mJ EAS, and 0.08 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max temp of 150°C, making it suitable for high-power systems.

1160 mJ

SINGLE WITH BUILT-IN DIODE

650 V

43.3 A

43.3 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

391 W

137 A

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON