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360 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IXFH32N50Q by IXYS Corporation

IXFH32N50Q

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 1500 mJ;

AVALANCHE RATED

1500 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

500 V

32 A

32 A

.16 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AD

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

360 W

128 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STE180NE10 by STMicroelectronics

STE180NE10

STMicroelectronics

STE180NE10 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 360A and EAS of 720mJ. Operating in ENHANCEMENT MODE, this transistor has a max ID of 180A and RDS(on) of 6 ohm, making it suitable for high-power tasks.

AVALANCHE RATED

720 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

100 V

180 A

180 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

360 W

360 A

Not Qualified

FET General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

IXTH94N20X4 by Littelfuse

IXTH94N20X4

Littelfuse

IXTH94N20X4 by Littelfuse is a N-CHANNEL FET with 200V DS breakdown voltage and 220A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 360W power dissipation.

AVALANCHE RATED

1000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

94 A

.0106 ohm

METAL-OXIDE SEMICONDUCTOR

4 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

360 W

220 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON