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36.7 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPD65R950CFDBTMA1 by Infineon Technologies

IPD65R950CFDBTMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.7 W; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: .95 ohm;

50 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

3.9 A

3.9 A

.95 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

36.7 W

11 A

FET General Purpose Power

YES

GULL WING

SINGLE

SWITCHING

SILICON

IPD65R950CFDATMA1 by Infineon Technologies

IPD65R950CFDATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.7 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 650 V;

50 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

3.9 A

3.9 A

.95 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

36.7 W

11 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON