Loading...

36.6 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTD4863N-1G by Onsemi

NTD4863N-1G

Onsemi

NTD4863N-1G by Onsemi is a Power FET with 25V DS Breakdown Voltage, 98A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Features include 60.5mJ EAS, 36.6W Pdiss, and max temp of 175 °C.

60.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

49 A

9.2 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

36.6 W

98 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD4863NT4G by Onsemi

NTD4863NT4G

Onsemi

NTD4863NT4G by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max pulsed drain current of 98A, avalanche energy rating of 60.5mJ, and max operating temperature of 175 °C. Ideal for high-power circuit designs requiring efficient switching capabilities in compact spaces.

60.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

49 A

9.2 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

36.6 W

98 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

BUK75150-55A,127 by NXP Semiconductors

BUK75150-55A,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36.6 W; Maximum Drain Current (Abs) (ID): 11 A; Terminal Position: SINGLE;

16 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

11 A

11 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

36.6 W

44 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DMTH48M3SFVWQ-13 by Diodes Incorporated

DMTH48M3SFVWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.6 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 40 V;

30.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

52.4 A

.0089 ohm

METAL-OXIDE SEMICONDUCTOR

12.4 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

36.6 W

209 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH48M3SFVW-13 by Diodes Incorporated

DMTH48M3SFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.6 W; Maximum Drain Current (ID): 52.4 A; Package Shape: SQUARE;

30.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

52.4 A

.0089 ohm

METAL-OXIDE SEMICONDUCTOR

12.4 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

36.6 W

209 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON