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326 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
C3M0025065K by Wolfspeed

C3M0025065K

Wolfspeed

C3M0025065K by Wolfspeed is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a max IDM of 251A, 0.034 ohm Drain-Source On Resistance, and 326W Power Dissipation. Ideal for SWITCHING applications, this SILICON CARBIDE MOSFET operates in ENHANCEMENT MODE at temperatures ranging from -40 to 175 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

97 A

.034 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

326 W

251 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE