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324 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK961R5-30E,118 by NXP Semiconductors

BUK961R5-30E,118

NXP Semiconductors

NXP Semiconductors BUK961R5-30E,118 is a N-channel FET with 30V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 1096mJ avalanche energy rating, and 0.0015 ohm max on resistance.

AVALANCHE RATED

1096 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

120 A

120 A

.0015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

324 W

1393 A

AEC-Q101; IEC-60134

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

BUK761R4-30E,118 by NXP Semiconductors

BUK761R4-30E,118

NXP Semiconductors

NXP Semiconductors BUK761R4-30E,118 is a N-channel FET with 30V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 1425A pulsed drain current, and 324W power dissipation in a small outline package.

AVALANCHE RATED

1096 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

120 A

120 A

.00145 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

324 W

1425 A

AEC-Q101; IEC-60134

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

BUK961R7-40E,118 by NXP Semiconductors

BUK961R7-40E,118

NXP Semiconductors

BUK961R7-40E,118 by NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with its built-in diode and low on-resistance.

AVALANCHE RATED

801 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.0017 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

324 W

1260 A

AEC-Q101; IEC-60134

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON