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3.8 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IRL3715SPBF by International Rectifier

IRL3715SPBF

International Rectifier

IRL3715SPBF by International Rectifier is a N-CHANNEL Power FET with 20V DS Breakdown Voltage and 30A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 210A Pulsed Drain Current, and 0.014ohm On Resistance. Suitable for surface mount with GULL WING terminals, it operates in ENHANCEMENT MODE up to 175°C.

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

30 A

54 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.8 W

210 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

SINGLE

30

SWITCHING

SILICON