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3.57 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK9MNN-65PKK,518 by NXP Semiconductors

BUK9MNN-65PKK,518

NXP Semiconductors

BUK9MNN-65PKK,518 from NXP Semiconductors is an N-channel power FET designed for enhancement mode applications. It supports a max drain current of 7.1 A and operates at temperatures up to 150 °C, making it ideal for efficient power management in electronics. Its surface mount design ensures easy integration into compact circuits.

7.1 A

7.1 A

METAL-OXIDE SEMICONDUCTOR

3

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

3.57 W

FET General Purpose Power

YES

30

DMP27M1UPSW-13 by Diodes Incorporated

DMP27M1UPSW-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.57 W; Transistor Application: SWITCHING; Maximum Feedback Capacitance (Crss): 518 pF;

54 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

84 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

518 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

3.57 W

179 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON