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3.45 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTMFD4901NFT1G by Onsemi

NTMFD4901NFT1G

Onsemi

NTMFD4901NFT1G by Onsemi is an N-CHANNEL Power FET with 30V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a 28.8mJ EAS rating and 0.01 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a compact SMALL OUTLINE package with DUAL terminals.

28.8 mJ

DRAIN SOURCE

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

23.4 A

13.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.45 W

60 A

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFD4902NFT1G by Onsemi

NTMFD4902NFT1G

Onsemi

NTMFD4902NFT1G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, 60A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications, it features SERIES configuration with 2 elements and built-in diode in a small outline package. Operating at up to 150 °C, it offers high power dissipation of 3.45W for efficient performance.

28.8 mJ

DRAIN SOURCE

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

23 A

13.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.45 W

60 A

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFD4901NFT3G by Onsemi

NTMFD4901NFT3G

Onsemi

NTMFD4901NFT3G by Onsemi is an N-channel Power FET for switching applications. It features a max pulsed drain current of 100A, avalanche energy rating of 115mJ, and max operating temperature of 150 °C. With a package style of small outline and terminal finish of matte tin, it is ideal for high-power electronic circuits.

115 mJ

DRAIN SOURCE

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

23.4 A

13.5 A

.0035 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

2

8

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.45 W

100 A

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON