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3.3 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMPH4013SPS-13 by Diodes Incorporated

DMPH4013SPS-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.3 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 403 pF;

260 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

69 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

403 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

3.3 W

277 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMN11M2UCA14-7 by Diodes Incorporated

DMN11M2UCA14-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.3 W; No. of Terminals: 14; Transistor Application: SWITCHING;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

25.5 A

.0034 ohm

METAL-OXIDE SEMICONDUCTOR

304 pF

R-XBCC-N14

e4

2

14

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

3.3 W

80 A

MIL-STD-202

YES

NICKEL GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON