Loading...

293 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK753R5-60E,127 by NXP Semiconductors

BUK753R5-60E,127

NXP Semiconductors

BUK753R5-60E,127 by NXP Semiconductors is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 120 A and power dissipation of 293 W, operating efficiently up to 175 °C. Ideal for demanding power management tasks in various electronic devices.

SINGLE

120 A

120 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

293 W

FET General Purpose Power

NO

TIN

BUK962R1-40E,118 by NXP Semiconductors

BUK962R1-40E,118

NXP Semiconductors

NXP Semiconductors' BUK962R1-40E,118 is an N-channel Power FET with 40V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 622mJ avalanche energy rating, and 0.0021 ohm max on-resistance. Suitable for enhancement mode operation in high-power systems with a max power dissipation of 293W at 175°C operating temperature.

AVALANCHE RATED

622 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.0021 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

293 W

1078 A

AEC-Q101; IEC-60134

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

BUK9E2R3-40E,127 by NXP Semiconductors

BUK9E2R3-40E,127

NXP Semiconductors

BUK9E2R3-40E,127 from NXP Semiconductors is an N-channel power FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-efficiency power management in automotive systems.

AVALANCHE RATED

622 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.0025 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

293 W

988 A

AEC-Q101; IEC-60134

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON