Loading...

290 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FQA24N50F by Fairchild Semiconductor

FQA24N50F

Fairchild Semiconductor

FQA24N50F by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 24A, Pulsed Drain Current of 96A, and an On Resistance of 0.2 ohm. The transistor operates in ENHANCEMENT MODE and has a Max Power Dissipation of 290W.

1100 mJ

SINGLE WITH BUILT-IN DIODE

500 V

24 A

24 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

290 W

96 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SCTW40N120G2VAG by STMicroelectronics

SCTW40N120G2VAG

STMicroelectronics

SCTW40N120G2VAG by STMicroelectronics is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. It has a max IDM of 100A and 0.105 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 290W.

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

33 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

15 pF

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

290 W

100 A

AEC-Q101

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE