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29 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FDMD8430 by Onsemi

FDMD8430

Onsemi

FDMD8430 by Onsemi is an N-CHANNEL Power FET with 30V DS Breakdown Voltage and 562A IDM. Commonly used for SWITCHING applications, it features a 96mJ EAS rating and 0.00212 ohm Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.

96 mJ

SOURCE

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

28 A

.00212 ohm

METAL-OXIDE SEMICONDUCTOR

160 pF

R-PDSO-N8

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.1 W

29 W

562 A

YES

NO LEAD

DUAL

SWITCHING

SILICON

150 ns

36 ns

STFH12N105K5 by STMicroelectronics

STFH12N105K5

STMicroelectronics

STFH12N105K5 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a 1050V breakdown voltage, 15A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Its compact design ensures efficient performance in various electronic circuits.

850 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

1050 V

8 A

1 ohm

METAL-OXIDE SEMICONDUCTOR

.6 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

29 W

15 A

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON