Loading...

283 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTP5860NLG by Onsemi

NTP5860NLG

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 283 W; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;

735 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

220 A

130 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

283 W

660 A

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVB5860NT4G by Onsemi

NVB5860NT4G

Onsemi

NVB5860NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 660A IDM, and 0.003 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.

735 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

220 A

220 A

.003 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

283 W

660 A

AEC-Q101

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SILICON

NVB5860NLT4G by Onsemi

NVB5860NLT4G

Onsemi

NVB5860NLT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 660A IDM, 735mJ EAS, and 0.0036 ohm RDS(ON). With a max power dissipation of 283W and operating temperature of 175 °C, it is suitable for high-power electronic systems.

735 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

220 A

130 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

283 W

660 A

AEC-Q101

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON