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280 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STW60N65M5 by STMicroelectronics

STW60N65M5

STMicroelectronics

STW60N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 184A IDM, 1400mJ EAS, and 0.059 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 280W at 150 °C.

ULTRA-LOW RESISTANCE

1400 mJ

SINGLE WITH BUILT-IN DIODE

650 V

46 A

46 A

.059 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

280 W

184 A

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW50NB20 by STMicroelectronics

STW50NB20

STMicroelectronics

STW50NB20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 50A Drain Current, and 0.055 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with 280W Power Dissipation and 150 °C Operating Temperature.

1000 mJ

SINGLE WITH BUILT-IN DIODE

200 V

50 A

50 A

.055 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

280 W

200 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FQA9N90C by Fairchild Semiconductor

FQA9N90C

Fairchild Semiconductor

FQA9N90C by Fairchild Semiconductor is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 36A Max Pulsed Drain Current and 1.4ohm Max RDS(ON), operating in ENHANCEMENT MODE at up to 150°C.

900 mJ

SINGLE WITH BUILT-IN DIODE

900 V

9 A

9 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

280 W

36 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW30NM60D by STMicroelectronics

STW30NM60D

STMicroelectronics

STW30NM60D by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 30A max drain current, and 280W power dissipation. Ideal for high-efficiency power management in various electronic devices.

740 mJ

SINGLE WITH BUILT-IN DIODE

600 V

30 A

30 A

.145 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

280 W

120 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FQA9N90C_F109 by Fairchild Semiconductor

FQA9N90C_F109

Fairchild Semiconductor

FQA9N90C_F109 by Fairchild Semiconductor is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 36A and EAS of 900mJ, operating in ENHANCEMENT MODE. The transistor has a single configuration with built-in diode, suitable for high-power requirements up to 280W at 150°C.

900 mJ

SINGLE WITH BUILT-IN DIODE

900 V

9 A

9 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

280 W

36 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FDA20N50-F109 by Onsemi

FDA20N50-F109

Onsemi

The Onsemi FDA20N50-F109 is a Power FET with N-CHANNEL polarity, 500V DS breakdown voltage, and 88A max pulsed drain current. Ideal for switching applications, it features a built-in diode in a plastic/epoxy package with 3 terminals. Operating in enhancement mode, it has a max power dissipation of 280W and can handle up to 150°C temperature.

FAST SWITCHING

1110 mJ

SINGLE WITH BUILT-IN DIODE

500 V

22 A

22 A

.23 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

280 W

88 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON