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262 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SCT2080KEC by ROHM

SCT2080KEC

ROHM

ROHM's SCT2080KEC is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max Drain Current of 40A and On Resistance of 0.117 ohm. Operating in ENHANCEMENT MODE, it can handle up to 80A Pulsed Drain Current and dissipate 262W power at max.

SINGLE WITH BUILT-IN DIODE

1200 V

40 A

40 A

.117 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

262 W

80 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

SCT3030ALHRC11 by ROHM

SCT3030ALHRC11

ROHM

ROHM's SCT3030ALHRC11 is a N-CHANNEL FET with 650V DS breakdown voltage and 175A IDM. Ideal for switching applications, it features 0.039 ohm max drain-source resistance and operates in enhancement mode at up to 175°C.

SINGLE WITH BUILT-IN DIODE

650 V

70 A

70 A

.039 ohm

METAL-OXIDE SEMICONDUCTOR

42 pF

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

265

N-CHANNEL

262 W

175 A

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

10

SWITCHING

SILICON CARBIDE