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24 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFD5853NLT1G by Onsemi

NVMFD5853NLT1G

Onsemi

NVMFD5853NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 165A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.

40 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

34 A

12 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

24 W

165 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFD5853NLWFT1G by Onsemi

NVMFD5853NLWFT1G

Onsemi

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Maximum Operating Temperature: 175 Cel; Package Style (Meter): SMALL OUTLINE;

40 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

34 A

12 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

24 W

165 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SILICON

2SK3755-AZ by Renesas Electronics

2SK3755-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 24 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 45 A;

SINGLE

45 A

45 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

260

N-CHANNEL

24 W

FET General Purpose Power

NO

10