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234 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK754R7-60E,127 by NXP Semiconductors

BUK754R7-60E,127

NXP Semiconductors

NXP Semiconductors' BUK754R7-60E,127 is an N-channel Power FET with 100A max drain current and 234W power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as power supplies and motor control systems.

SINGLE

100 A

100 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

234 W

FET General Purpose Power

NO

TIN

BUK9E4R9-60E,127 by NXP Semiconductors

BUK9E4R9-60E,127

NXP Semiconductors

BUK9E4R9-60E,127 from NXP is an N-channel power FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-power circuits with built-in diode functionality.

AVALANCHE RATED

273 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

100 A

100 A

.0049 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

234 W

590 A

AEC-Q101; IEC-60134

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK953R2-40E,127 by NXP Semiconductors

BUK953R2-40E,127

NXP Semiconductors

BUK953R2-40E,127 by NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with its built-in diode and low on-resistance.

AVALANCHE RATED

419 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

100 A

100 A

.0032 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

234 W

781 A

AEC-Q101; IEC-60134

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK9E3R2-40E,127 by NXP Semiconductors

BUK9E3R2-40E,127

NXP Semiconductors

BUK9E3R2-40E,127 from NXP Semiconductors is an N-channel power FET designed for switching applications. It features a max drain current of 100 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-efficiency power management in automotive systems.

AVALANCHE RATED

419 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

100 A

100 A

.0032 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

234 W

781 A

AEC-Q101; IEC-60134

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON