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221 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVHL060N090SC1 by Onsemi

NVHL060N090SC1

Onsemi

NVHL060N090SC1 by Onsemi is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 184A and EAS of 162mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and SILICON CARBIDE element material, it offers high performance in various power electronics systems.

162 mJ

SINGLE WITH BUILT-IN DIODE

900 V

46 A

46 A

.084 ohm

METAL-OXIDE SEMICONDUCTOR

11 pF

TO-247

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

221 W

184 A

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON CARBIDE

94 ns

106 ns